Order Article Reprints

Cioni M, Cappellini G, Giorgino G, Chini A, Parisi A, Miccoli C, Castagna ME, Constant A, Iucolano F. Impact of SiN Passivation on Dynamic-R_ON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs. Electronic Materials. 2025; 6(4):14. https://doi.org/10.3390/electronicmat6040014

Cioni, Marcello, Giacomo Cappellini, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Cristina Miccoli, Maria Eloisa Castagna, Aurore Constant, and Ferdinando Iucolano. 2025. "Impact of SiN Passivation on Dynamic-R_ON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs" Electronic Materials 6, no. 4: 14. https://doi.org/10.3390/electronicmat6040014

Cioni, M., Cappellini, G., Giorgino, G., Chini, A., Parisi, A., Miccoli, C., Castagna, M. E., Constant, A., & Iucolano, F. (2025). Impact of SiN Passivation on Dynamic-R_ON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs. Electronic Materials, 6(4), 14. https://doi.org/10.3390/electronicmat6040014