Cioni, M.; Cappellini, G.; Giorgino, G.; Chini, A.; Parisi, A.; Miccoli, C.; Castagna, M.E.; Constant, A.; Iucolano, F.
Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs. Electron. Mater. 2025, 6, 14.
https://doi.org/10.3390/electronicmat6040014
AMA Style
Cioni M, Cappellini G, Giorgino G, Chini A, Parisi A, Miccoli C, Castagna ME, Constant A, Iucolano F.
Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs. Electronic Materials. 2025; 6(4):14.
https://doi.org/10.3390/electronicmat6040014
Chicago/Turabian Style
Cioni, Marcello, Giacomo Cappellini, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Cristina Miccoli, Maria Eloisa Castagna, Aurore Constant, and Ferdinando Iucolano.
2025. "Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs" Electronic Materials 6, no. 4: 14.
https://doi.org/10.3390/electronicmat6040014
APA Style
Cioni, M., Cappellini, G., Giorgino, G., Chini, A., Parisi, A., Miccoli, C., Castagna, M. E., Constant, A., & Iucolano, F.
(2025). Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs. Electronic Materials, 6(4), 14.
https://doi.org/10.3390/electronicmat6040014
