Liu, J.; Huang, S.; Xiao, Z.; Li, N.; Kim, J.; Jin, J.; Zhang, J.
Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density. Electron. Mater. 2025, 6, 2.
https://doi.org/10.3390/electronicmat6010002
AMA Style
Liu J, Huang S, Xiao Z, Li N, Kim J, Jin J, Zhang J.
Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density. Electronic Materials. 2025; 6(1):2.
https://doi.org/10.3390/electronicmat6010002
Chicago/Turabian Style
Liu, Jiaxin, Shan Huang, Zhenyuan Xiao, Ning Li, Jaekyun Kim, Jidong Jin, and Jiawei Zhang.
2025. "Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density" Electronic Materials 6, no. 1: 2.
https://doi.org/10.3390/electronicmat6010002
APA Style
Liu, J., Huang, S., Xiao, Z., Li, N., Kim, J., Jin, J., & Zhang, J.
(2025). Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density. Electronic Materials, 6(1), 2.
https://doi.org/10.3390/electronicmat6010002