Analysis of Power Modules Including Phase Change Materials in the Top Interconnection of Semiconductor Devices
Round 1
Reviewer 1 Report
Comments and Suggestions for AuthorsComments
Analysis of power modules including phase change materials in the top interconnection of power semiconductor devices
The paper aims at designing a new class of power modules with integrated Phase Change Material (PCM) in a container serving as top device interconnection. Simulation and experiments are performed on two organic PCMs and the interest of the adding of copper foam is discussed. However, from the technical and scientific standpoint, the paper in its current form is not suitable to be published. The manuscript is not carefully written, and there are a lot of low-level mistakes. The manuscript may be considered for acceptance once the following issues, detailed below, have been addressed.
1. In line 160 and 161, it states “Moreover, theses interposers are selected with an intermediate CTE of 8.8 ppm/°C between the SiC and the copper ones.”. Please give the full name for the abbreviation of “CTE” and “ppm”.
2. The figures in this manuscript are numbered as “Figure 1”, “Figure 2”, “Figure 3”, “Figure 4”, “Figure 1”, “Figure 2”, “Figure 3”, “Figure 4”, “Figure 5”, “Figure 6”, “Figure 7”. Please sort the figures by serial number consecutively.
3. In line 359, 421, 429 and 460, the reference number is lost and “Error! Reference source not found” appears, please add the correct number.
4. The size of the container is 3×1.1×1 cm3 and the inner size are 2.9×1×0.9 cm3, thus the thickness of the container wall is 0.05cm (or 0.5mm). The cell size used in the simulation is 0.5×0.5×0.2 mm3. For the container wall, only one cell is placed in the thickness direction, which can’t get the correct transversal heat transfer in the container wall.
5. According to the description in this manuscript, the coolant is placed on the backside of the substrate with fixed temperature at 30°C. The heat generated by the MOSFET is absorbed in two ways, first way by the coolant on the backside of the substrate, and second way by the PCM. Please quantify the heat absorbed in each way.
Comments on the Quality of English LanguageThe manuscript requires thorough English editing to address unclear sentences and grammatical errors.
The manuscript still requires substantial English editing to ensure clarity and correct grammatical errors throughout.
Author Response
C1: In line 160 and 161, it states “Moreover, theses interposers are selected with an intermediate CTE of 8.8 ppm/°C between the SiC and the copper ones.”. Please give the full name for the abbreviation of “CTE” and “ppm”.
R1: Full name for both abbreviations has been added in the text : Coeficient of thermal expansion for CTE and part per million /°C ppm/°C
C2: The figures in this manuscript are numbered as “Figure 1”, “Figure 2”, “Figure 3”, “Figure 4”, “Figure 1”, “Figure 2”, “Figure 3”, “Figure 4”, “Figure 5”, “Figure 6”, “Figure 7”. Please sort the figures by serial number consecutively.
R2: Sorry for this issue, the number of figures has been corrected in the corrected manuscript.
C3: In line 359, 421, 429 and 460, the reference number is lost and “Error! Reference source not found” appears, please add the correct number.
R3: Sorry for this issue, the number of figures has been corrected in the corrected manuscript.
C4: The size of the container is 3×1.1×1 cm3and the inner size are 2.9×1×0.9 cm3, thus the thickness of the container wall is 0.05cm (or 0.5mm). The cell size used in the simulation is 0.5×0.5×0.2 mm3. For the container wall, only one cell is placed in the thickness direction, which can’t get the correct transversal heat transfer in the container wall.
R4: As mentioned in the text, “A mesh dependence study is carried out to optimize the cell size regarding accuracy and computation cost”. During these simulations, cubic cells with 0.1 mm side were also used and the error in the temperature value was less than 0.3%. This information was added in the text for more clarity (lines 245-247) .
C5: According to the description in this manuscript, the coolant is placed on the backside of the substrate with fixed temperature at 30°C. The heat generated by the MOSFET is absorbed in two ways, first way by the coolant on the backside of the substrate, and second way by the PCM. Please quantify the heat absorbed in each way.
R5: Quantifying the heat dissipated is dependent of various parameter like the time and the power, the PCM nature and the use of foam, the cooling system performance and so on… However by considering a specific example like the one presented in Figure 7 and by comparing the case of containers with or without erythritol (green and orange respectively) for a power of 1.5Pn, the difference of the surface covered by each curve during the first 30 seconds can reflect that around 50% of the additional energy (47.5 W x 30s) is absorbed by the PCM. This specific comparison has been added to the manuscript (lines 366 to 370).
Reviewer 2 Report
Comments and Suggestions for AuthorsThere are a few places need more works on:
1. Figure1: The font in the figures are rather small, hard to read.
2. Citations: A few errors occur during citation, need to insure that don't happen.
Comments on the Quality of English LanguageNeed to use more uniform concepts, such as inorganic & non-organic in page 2, line 63 and 65
Author Response
C1: Figure1: The font in the figures are rather small, hard to read.
R1: The Figure 1 has been adjusted.
C2: Citations: A few errors occur during citation, need to insure that don't happen.
R2: Sorry for this issue, the number of figures has been corrected in this version.
C3: Need to use more uniform concepts, such as inorganic & non-organic in page 2, line 63 and 65
R3: Several uniform concepts have been used in the whole text as for exemple Non organic replaced by inorganic in the whole document, subcooling replaced by supercooling. latent heat replaced by latent heat of fusion, thermal peaks replaced by power peaks, heat treatment replaced by isothermal aging
Reviewer 3 Report
Comments and Suggestions for AuthorsThis work is to adopt PCM as a heat storage material to prevent overheating of semiconductors during operation. The manuscript is written fairly with some minor errors.
1. CTE is mentioned in sample preparation, but it is not defined.
2. I believe DSC does not define as Dynamic Scanning Calorimetry, please check.
3. The heating and cooling rate for Figure 4 is not mentioned in the manuscript.
4. Order of Figures are incorrect. After Figure 4, the order of Figures starts from Figure 1 again. In text Figures are not properly aligned as errors are written in the manuscript.
5. Figure 4b (assumed Figure 8b) is difficult to read, please avoid using light colours.
Author Response
C1: CTE is mentioned in sample preparation, but it is not defined.
R1: The CTE definition is added: coeficient of thermal expansion
C2: I believe DSC does not define as Dynamic Scanning Calorimetry, please check.
R2: Corrected and replaced by Differential Scanning Calorimetry
C3:The heating and cooling rate for Figure 4 is not mentioned in the manuscript.
R3: Mentionned in Line 209 in the text and added in the legend of Figure 4 for more clarity (10°C/min).
C4: Order of Figures are incorrect. After Figure 4, the order of Figures starts from Figure 1 again. In text Figures are not properly aligned as errors are written in the manuscript.
R4: Sorry for this issue, the number of figures has been corrected in this version.
C5: Figure 4b (assumed Figure 8b) is difficult to read, please avoid using light colours.
R5:Light colors have been changed as recommended.
