Kwon, S.-Y.; Ko, W.-S.; Byun, J.-H.; Lee, D.-Y.; Lee, H.-D.; Lee, G.-W.
The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode. Electron. Mater. 2024, 5, 71-79.
https://doi.org/10.3390/electronicmat5020006
AMA Style
Kwon S-Y, Ko W-S, Byun J-H, Lee D-Y, Lee H-D, Lee G-W.
The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode. Electronic Materials. 2024; 5(2):71-79.
https://doi.org/10.3390/electronicmat5020006
Chicago/Turabian Style
Kwon, So-Yeon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Hi-Deok Lee, and Ga-Won Lee.
2024. "The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode" Electronic Materials 5, no. 2: 71-79.
https://doi.org/10.3390/electronicmat5020006
APA Style
Kwon, S.-Y., Ko, W.-S., Byun, J.-H., Lee, D.-Y., Lee, H.-D., & Lee, G.-W.
(2024). The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode. Electronic Materials, 5(2), 71-79.
https://doi.org/10.3390/electronicmat5020006