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Journal: Electron. Mater., 2021
Volume: 2
Number: 33
Article:
One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor
Authors:
by
Jignesh Vanjaria, Venkat Hariharan, Arul Chakkaravarthi Arjunan, Yanze Wu, Gary S. Tompa and Hongbin Yu
Link:
https://www.mdpi.com/2673-3978/2/4/33
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