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Journal: Ceramics, 2025
Volume: 8
Number: 49

Article: Properties of Bilayer Zr- and Sm-Oxide Gate Dielectric on 4H-SiC Substrate Under Varying Nitrogen and Oxygen Concentrations
Authors: by Ahmad Hafiz Jafarul Tarek, Tahsin Ahmed Mozaffor Onik, Chin Wei Lai, Bushroa Abdul Razak, Chia Ching Kee and Yew Hoong Wong
Link: https://www.mdpi.com/2571-6131/8/2/49

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