Jafarul Tarek, A.H.; Mozaffor Onik, T.A.; Lai, C.W.; Abdul Razak, B.; Kee, C.C.; Wong, Y.H.
Properties of Bilayer Zr- and Sm-Oxide Gate Dielectric on 4H-SiC Substrate Under Varying Nitrogen and Oxygen Concentrations. Ceramics 2025, 8, 49.
https://doi.org/10.3390/ceramics8020049
AMA Style
Jafarul Tarek AH, Mozaffor Onik TA, Lai CW, Abdul Razak B, Kee CC, Wong YH.
Properties of Bilayer Zr- and Sm-Oxide Gate Dielectric on 4H-SiC Substrate Under Varying Nitrogen and Oxygen Concentrations. Ceramics. 2025; 8(2):49.
https://doi.org/10.3390/ceramics8020049
Chicago/Turabian Style
Jafarul Tarek, Ahmad Hafiz, Tahsin Ahmed Mozaffor Onik, Chin Wei Lai, Bushroa Abdul Razak, Chia Ching Kee, and Yew Hoong Wong.
2025. "Properties of Bilayer Zr- and Sm-Oxide Gate Dielectric on 4H-SiC Substrate Under Varying Nitrogen and Oxygen Concentrations" Ceramics 8, no. 2: 49.
https://doi.org/10.3390/ceramics8020049
APA Style
Jafarul Tarek, A. H., Mozaffor Onik, T. A., Lai, C. W., Abdul Razak, B., Kee, C. C., & Wong, Y. H.
(2025). Properties of Bilayer Zr- and Sm-Oxide Gate Dielectric on 4H-SiC Substrate Under Varying Nitrogen and Oxygen Concentrations. Ceramics, 8(2), 49.
https://doi.org/10.3390/ceramics8020049
