Bornemann, S.; Yulianto, N.; Meyer, T.; Gülink, J.; Margenfeld, C.; Seibt, M.; Wasisto, H.S.; Waag, A.
Structural Modifications in Free-Standing InGaN/GaN LEDs after Femtosecond Laser Lift-Off. Proceedings 2018, 2, 897.
https://doi.org/10.3390/proceedings2130897
AMA Style
Bornemann S, Yulianto N, Meyer T, Gülink J, Margenfeld C, Seibt M, Wasisto HS, Waag A.
Structural Modifications in Free-Standing InGaN/GaN LEDs after Femtosecond Laser Lift-Off. Proceedings. 2018; 2(13):897.
https://doi.org/10.3390/proceedings2130897
Chicago/Turabian Style
Bornemann, Steffen, Nursidik Yulianto, Tobias Meyer, Jan Gülink, Christoph Margenfeld, Michael Seibt, Hutomo Suryo Wasisto, and Andreas Waag.
2018. "Structural Modifications in Free-Standing InGaN/GaN LEDs after Femtosecond Laser Lift-Off" Proceedings 2, no. 13: 897.
https://doi.org/10.3390/proceedings2130897
APA Style
Bornemann, S., Yulianto, N., Meyer, T., Gülink, J., Margenfeld, C., Seibt, M., Wasisto, H. S., & Waag, A.
(2018). Structural Modifications in Free-Standing InGaN/GaN LEDs after Femtosecond Laser Lift-Off. Proceedings, 2(13), 897.
https://doi.org/10.3390/proceedings2130897
