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Open AccessProceedings

A CMOS-Based Thermopile Array Fabricated on a Single SiO2 Membrane

1
ams Sensors UK Limited, Cambridge CB4 0DL, UK
2
Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK
*
Author to whom correspondence should be addressed.
Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.
Proceedings 2018, 2(13), 878; https://doi.org/10.3390/proceedings2130878
Published: 22 November 2018
(This article belongs to the Proceedings of EUROSENSORS 2018)
We present a novel thermopile-based infrared (IR) sensor array fabricated on a single CMOS dielectric membrane, comprising of poly-silicon p+ and n+ elements. Processing of the chip is simplified by fabricating the entire array on a single membrane and by using standard CMOS Al metal layers for thermopile cold junction heatsinking. On a chip area of 1.76 mm × 1.76 mm, with a membrane size of 1.2 mm × 1.2 mm, we fabricated IR sensor arrays with 8 × 8 to 100 × 100 pixels. The 8 × 8 pixel device has <2% thermal crosstalk, a responsivity of 36 V/W and enhanced optical absorption in the 8–14 µm waveband, making it particularly suitable for people presence sensing.
Keywords: MEMS; CMOS; infrared; thermopile array; IR image sensor; presence sensing MEMS; CMOS; infrared; thermopile array; IR image sensor; presence sensing
MDPI and ACS Style

Hopper, R.; Ali, S.Z.; Boual, S.; Luca, A.D.; Dai, Y.; Popa, D.; Udrea, F. A CMOS-Based Thermopile Array Fabricated on a Single SiO2 Membrane. Proceedings 2018, 2, 878.

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