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Proceedings 2018, 2(13), 785; https://doi.org/10.3390/proceedings2130785

Buckling Porous SiC Membranes

Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna, Austria
Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.
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Published: 17 December 2018
(This article belongs to the Proceedings of Eurosensors 2018)
PDF [460 KB, uploaded 17 December 2018]

Abstract

In preliminary studies it could be shown that single crystalline silicon carbide wafers can be porosified with metal assisted photochemical etching. Furthermore, the generation of porous areas which are locally defined is possible with this method. By adjusting the etching parameters, a highly porous layer (degree of porosity of 90%) can be formed which is under-etched by a line of breakage. By depositing a compressively stressed amorphous SiC:H thin film on top of a porous region, the a-SiC:H film can be locally separated from the substrate, resulting in a buckled membrane configuration. Such membranes might open up potential applications in MEMS design concepts.
Keywords: metal assisted photochemical etching; porous silicon carbide; buckled a-SiC:H membrane metal assisted photochemical etching; porous silicon carbide; buckled a-SiC:H membrane
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Leitgeb, M.; Zellner, C.; Dorfmeister, M.; Schneider, M.; Schmid, U. Buckling Porous SiC Membranes. Proceedings 2018, 2, 785.

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