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Journal: Proceedings, 2017
Volume: 1
Number: 419

Article: Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET
Authors: by Ahmet Lale, Auriane Grappin, Laurent Mazenq, David Bourrier, Aurélie Lecestre, Jérôme Launay and Pierre Temple-Boyer
Link: https://www.mdpi.com/2504-3900/1/4/419

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