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Proceedings 2017, 1(4), 382;

High Sensitivity Ultraviolet Light Off-Stoichiometric Silicon Oxide-Based Sensors

Universidad Autónoma de Puebla, Av. San Claudio y 14 Sur. Cp. 72570, Puebla, Mexico
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Author to whom correspondence should be addressed.
Published: 25 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
PDF [391 KB, uploaded 26 August 2017]


We have developed a UV silicon detector made of silicon and off-stoichiometric silicon dioxide that shows high efficiency and is completely compatible with silicon devices technology. The silicon-based UV detector present a solar cell-like structure which does not require any voltage source. In addition, an off-stoichiometric silicon dioxide film (Silicon Rich Oxide) with silicon nanocrystals has been integrated to this structure. It is shown that the spectral response is due to the high photoluminescence of Si nanocrystals in the visible region when illuminated with UV light and an increase of 100% in the UV detector efficiency is observed with respect to conventional silicon dioxide layers.
Keywords: Silicon Rich Oxide; UV detectors; Si nanocrystals; solar cell-like structure Silicon Rich Oxide; UV detectors; Si nanocrystals; solar cell-like structure
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Carrillo, J.; Luna, J.A.; García, G.; Juárez, H. High Sensitivity Ultraviolet Light Off-Stoichiometric Silicon Oxide-Based Sensors. Proceedings 2017, 1, 382.

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