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Proceedings 2017, 1(4), 308;

Incorporation of ZnO Nanostructures in MIS Architecture through Chemical Routes

Facultad de Ingeniería Química, Benemérita Universidad Autónoma de Puebla, 5013 Puebla, Pue., Mexico
IC-CIDS Benemérita Universidad Autónoma de Puebla, Ed. IC5 o IC6, Col. San Manuel, C.P. 72570 Puebla, Pue., Mexico
INAOE, Electronics Department, Apartado 51, 72000 Puebla, Mexico
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Author to whom correspondence should be addressed.
Published: 18 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
PDF [926 KB, uploaded 13 October 2017]


Because it’s physical properties, ZnO is considered a potential semiconductor compound for fabricating electronic and optoelectronic functional devices. In this regard, several growth techniques have been developed in order to meet the requirements of commercial devices based in this material. On the pathway for improving the performance of the current devices, low-dimensional ZnO structures seem a promising alternative. Here, we report the process to obtain a metal-insulator-semiconductor (MIS) structure based on ZnO nanostructures grown on the surface of an anodized aluminum substrate (Al2O3/Al) by chemical routes.
Keywords: ZnO; SEM; morphology; XRD; MIS ZnO; SEM; morphology; XRD; MIS
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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García, R.J.A.; Morales, A.E.; López, J.C.; Jimenez, M.D.; Ramírez, N.C.; López, J.A.L. Incorporation of ZnO Nanostructures in MIS Architecture through Chemical Routes. Proceedings 2017, 1, 308.

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