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Open AccessProceedings

Scandium Aluminium Nitride-Based Film Bulk Acoustic Resonators

1
Institute of Sensor and Actuator Systems, TU Wien, Gusshausstrasse 27–29, Vienna, Austria
2
Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK
3
GMME-CEMDATIC, ETSI de Telecomunicación, Universidad Politécnica de Madrid, Av. Complutense 30, 28040 Madrid, Spain
*
Author to whom correspondence should be addressed.
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Proceedings 2017, 1(4), 305; https://doi.org/10.3390/proceedings1040305
Published: 18 August 2017
(This article belongs to the Proceedings of Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017)
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devices as filters or delay lines, but also offer exciting opportunities as biological or gas sensors. In this work, solidly mounted FBARs were manufactured by substituting commonly used pure aluminium nitride (AlN) by scandium doped aluminium nitride (ScAlN) thin films as the piezoelectric layer. The ScAlN-based resonators feature a significant improvement of the electromechanical coupling factor from ~3% to ~12% compared to the pure AlN, while the decreased stiffness of ScAlN results in a decrease of the quality factor from ~300 to ~100 due to increased damping losses in the piezoelectric material.
Keywords: film bulk acoustic resonator; FBAR; solidly mounted resonator; SMR; aluminium nitride; scandium aluminium nitride; electromechanical coupling factor; network analyser film bulk acoustic resonator; FBAR; solidly mounted resonator; SMR; aluminium nitride; scandium aluminium nitride; electromechanical coupling factor; network analyser
MDPI and ACS Style

Schneider, M.; DeMiguel-Ramos, M.; Flewitt, A.J.; Iborra, E.; Schmid, U. Scandium Aluminium Nitride-Based Film Bulk Acoustic Resonators. Proceedings 2017, 1, 305.

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