Peng, X.; Jiang, W.; Chang, R.; Hu, H.; Lv, S.; Ouyang, X.; Qiu, M.
Temperature and Fluence Dependence Investigation of the Defect Evolution Characteristics of GaN Single Crystals Under Radiation with Ion Beam-Induced Luminescence. Quantum Beam Sci. 2026, 10, 2.
https://doi.org/10.3390/qubs10010002
AMA Style
Peng X, Jiang W, Chang R, Hu H, Lv S, Ouyang X, Qiu M.
Temperature and Fluence Dependence Investigation of the Defect Evolution Characteristics of GaN Single Crystals Under Radiation with Ion Beam-Induced Luminescence. Quantum Beam Science. 2026; 10(1):2.
https://doi.org/10.3390/qubs10010002
Chicago/Turabian Style
Peng, Xue, Wenli Jiang, Ruotong Chang, Hongtao Hu, Shasha Lv, Xiao Ouyang, and Menglin Qiu.
2026. "Temperature and Fluence Dependence Investigation of the Defect Evolution Characteristics of GaN Single Crystals Under Radiation with Ion Beam-Induced Luminescence" Quantum Beam Science 10, no. 1: 2.
https://doi.org/10.3390/qubs10010002
APA Style
Peng, X., Jiang, W., Chang, R., Hu, H., Lv, S., Ouyang, X., & Qiu, M.
(2026). Temperature and Fluence Dependence Investigation of the Defect Evolution Characteristics of GaN Single Crystals Under Radiation with Ion Beam-Induced Luminescence. Quantum Beam Science, 10(1), 2.
https://doi.org/10.3390/qubs10010002
