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Journal: Quantum Beam Sci., 2023
Volume: 7
Number: 31

Article: Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors
Authors: by Akinori Takeyama, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki and Takeshi Ohshima
Link: https://www.mdpi.com/2412-382X/7/4/31

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