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Article

Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams

1
Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
2
Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Takeshi Ohshima
Quantum Beam Sci. 2022, 6(1), 13; https://doi.org/10.3390/qubs6010013
Received: 30 December 2021 / Revised: 1 February 2022 / Accepted: 1 March 2022 / Published: 16 March 2022
(This article belongs to the Special Issue Quantum Beam and Its Applications for Quantum Technologies)
Short-pulse ion beams have been developed in recent years and now enable applications in materials science. A tunable flux of selected ions delivered in pulses of a few nanoseconds can affect the balance of defect formation and dynamic annealing in materials. We report results from color center formation in silicon with pulses of 900 keV protons. G-centers in silicon are near-infrared photon emitters with emerging applications as single-photon sources and for spin-photon qubit integration. G-centers consist of a pair of substitutional carbon atoms and one silicon interstitial atom and are often formed by carbon ion implantation and thermal annealing. Here, we report on G-center formation with proton pulses in silicon samples that already contained carbon, without carbon ion implantation or thermal annealing. The number of G-centers formed per proton increased when we increased the pulse intensity from 6.9 × 109 to 7.9 × 1010 protons/cm2/pulse, demonstrating a flux effect on G-center formation efficiency. We observe a G-center ensemble linewidth of 0.1 nm (full width half maximum), narrower than previously reported. Pulsed ion beams can extend the parameter range available for fundamental studies of radiation-induced defects and the formation of color centers for spin-photon qubit applications. View Full-Text
Keywords: pulsed ion beams; induction accelerator; photon emitters; qubits; color centers pulsed ion beams; induction accelerator; photon emitters; qubits; color centers
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MDPI and ACS Style

Schenkel, T.; Redjem, W.; Persaud, A.; Liu, W.; Seidl, P.A.; Amsellem, A.J.; Kanté, B.; Ji, Q. Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams. Quantum Beam Sci. 2022, 6, 13. https://doi.org/10.3390/qubs6010013

AMA Style

Schenkel T, Redjem W, Persaud A, Liu W, Seidl PA, Amsellem AJ, Kanté B, Ji Q. Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams. Quantum Beam Science. 2022; 6(1):13. https://doi.org/10.3390/qubs6010013

Chicago/Turabian Style

Schenkel, Thomas, Walid Redjem, Arun Persaud, Wei Liu, Peter A. Seidl, Ariel J. Amsellem, Boubacar Kanté, and Qing Ji. 2022. "Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams" Quantum Beam Science 6, no. 1: 13. https://doi.org/10.3390/qubs6010013

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