Wang, L.; Wang, Y.; Li, W.; Gao, Z.; Han, Y.; Wen, D.
Physically Transient Gelatin-Based Memristors of Buildable Logic Gates. Gels 2025, 11, 428.
https://doi.org/10.3390/gels11060428
AMA Style
Wang L, Wang Y, Li W, Gao Z, Han Y, Wen D.
Physically Transient Gelatin-Based Memristors of Buildable Logic Gates. Gels. 2025; 11(6):428.
https://doi.org/10.3390/gels11060428
Chicago/Turabian Style
Wang, Lu, Yuting Wang, Wenhao Li, Zhiqiang Gao, Yutong Han, and Dianzhong Wen.
2025. "Physically Transient Gelatin-Based Memristors of Buildable Logic Gates" Gels 11, no. 6: 428.
https://doi.org/10.3390/gels11060428
APA Style
Wang, L., Wang, Y., Li, W., Gao, Z., Han, Y., & Wen, D.
(2025). Physically Transient Gelatin-Based Memristors of Buildable Logic Gates. Gels, 11(6), 428.
https://doi.org/10.3390/gels11060428