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Journal: Inorganics, 2024
Volume: 12
Number: 207
Article:
Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates
Authors:
by
Yujie Yan, Jun Huang, Lei Pan, Biao Meng, Qiangmin Wei and Bing Yang
Link:
https://www.mdpi.com/2304-6740/12/8/207
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