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Article

Improved Photothermal Heating of NaNdF4 Microcrystals via Low-Level Doping of Sm3+ for Thermal-Responsive Upconversion Luminescence Anti-Counterfeiting

Huzhou Key Laboratory of Materials for Energy Conversion and Storage, College of Science, Huzhou University, Huzhou 313000, China
*
Author to whom correspondence should be addressed.
Inorganics 2024, 12(12), 327; https://doi.org/10.3390/inorganics12120327
Submission received: 18 October 2024 / Revised: 3 December 2024 / Accepted: 9 December 2024 / Published: 13 December 2024
(This article belongs to the Special Issue Optical and Quantum Electronics: Physics and Materials)

Abstract

This work reports the light-to-heat conversion (LHC) behavior of NaNdF4 doped with Sm3+. Due to the cross-relaxation between Nd3+ and Sm3+, the improved LHC is obtainable by introducing 5% Sm3+. When the laser power density is only 1.72 W/cm2, the spot temperature of NaNdF4:5%Sm3+ powder reaches as high as 138.7 ± 4.04 °C. More importantly, the photoheating response to the pump laser has favorable linear characteristics within a specific power range. A simple physical model is applied to analyze the relationship between photothermal heating and pump power. Finally, the temperature-responsive luminescence anti-counterfeiting is designed by combining the LHC material with the NaYF4:Yb3+/Ho3+/Ce3+ microcrystals. This novel strategy only requires two laser beams, and thus is more convenient to apply.

1. Introduction

Photothermal heating (i.e., electron−phonon coupling under radiation excitation) has been considered harmful to luminescence [1]. However, it has recently attracted increasing attention because of its potential applicability in tumor photothermal therapy [2,3,4,5].
In principle, the ion centers for light-to-heat conversion (LHC) should have a high state density to allow for the fast multi-phonon relaxation processes. Moreover, it is significant to incorporate a high concentration of LHC ions into the host materials since the cross-relaxation between LHC ions is another effective channel to quench luminescence. Due to meager quantum yield, Yb3+-sensitized upconversion luminescence (UCL) materials have been reported for optical heaters [6,7,8]. However, this strategy is not particularly ideal because, on the one hand, the Yb3+ ions produce strong ~1000 nm emission [9], while on the other hand, the energy gap between some levels of Er3+, Tm3+, and Ho3+ is relatively large, which makes it difficult for the multi-phonon relaxation to occur. To solve the issues, Chen et al. selected Dy3+ and Sm3+, with a high state density in the energy range of 0–10,000 cm−1, as LHC ions, thus obtaining favorable photothermal heating properties [10,11]. Compared to Yb3+, Nd3+ possesses a larger absorbing cross-section, and its relatively abundant energy levels allow it to be a self-sensitized LHC ion [12,13]. Notably, the pure Nd3+-based materials (e.g., NaNdF4) emit efficient near-infrared light when excited at ~800 nm radiation [14,15], which means the LHC is improvable via quenching the luminescence. Recently, Yu et al. reported that designing Prussian blue-coated NaNdF4 nanoparticles is an effective strategy [16]. In contrast, Nd3+/Sm3+ codoping is much simpler in the preparation procedure. Nevertheless, the previous reports doped relatively low concentrations of Nd3+ or high concentrations of Sm3+, resulting in low radiation absorption at ~800 nm [12,17]. A more reasonable doping should be to fully quench the luminescence of Nd3+ ions without significantly affecting the light absorption. That is, the content of Nd3+ should be high, while that of Sm3+ is relatively low.
On the other hand, some studies have shown that the thermal-responsive UCL color tuning is potentially applicable in advanced luminescence anti-counterfeiting [18,19,20,21]. Nevertheless, external heating prevents its real applications. Applying Nd3+-sensitized LHC materials to tune the upconversion luminescence seems a promising strategy. But as far as we know, there have been no relevant reports.
In this work, 5% Sm3+ is introduced into the NaNdF4 lattice to quench the near-infrared emission of Nd3+ under 808 nm excitation. As a result, the improved LHC property is obtainable. Mechanism studies indicate that the absorbed excitation energy is completely converted into thermal energy through the self-quench of Nd3+ and the cross-relaxation between Nd3+ and Sm3+. Impressively, when the change of dissipation temperature with power is ignorable, the spot temperature of NaNdF4:5%Sm3+ has a favorable linear relationship with the pump power density. Finally, this LHC material is applied to regulate the UCL color of NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ under 980 nm excitation. Compared to the external temperature control, this novel strategy only requires two laser beams and thus is more convenient to use.

2. Results and Discussion

Figure 1a,b shows the Rietveld refinement of XRD data for the samples obtained by adjusting the ratio of Ln3+ and F. Rwp and Rp below 10% suggest that the phase purity is high. More interestingly, the phase structure of fluorides is controllable. When the molar ratio of Ln3+ to F is 4:1 and 12:1, the as-prepared samples are indexed to hexagonal NdF3 (JCPDS No. 09-0416) and NaNdF4 (JCPDS No. 72-1532), respectively. After introducing 5% Sm3+ into the host, no impurities are observable, which suggests that the introduction of Sm3+ ions does not destroy the crystal structure. Based on Hume-Rothery rules for atomic substitution [22], it can be inferred that the doped Sm3+ ions occupy the Nd3+ sites. SEM images, shown in Figure 1c,d, reveal that NdF3:5%Sm3+ and NaNdF4:5%Sm3+ present different preferred orientation growth, which can be attributed to the difference in surface density of the lattice [18]. Furthermore, EDX mappings show that the Sm3+ ions are uniformly distributed in the lattice of the NaNdF4:5%Sm3+ sample, as shown in Figure 1e–i. The concentration ratio of Nd to Sm is estimated to be about 19.8, which is very close to the designed molar ratio.
Figure 2 shows the heating characteristics of NdF3:5%Sm3+ and NaNdF4:5%Sm3+ samples under 808 nm laser irradiation. Both samples show good LHC behavior, but the latter is better due to its stronger light absorption. When the laser power density is 1.72 W/cm2, the spot temperature of NaNdF4:5%Sm3+ powder reaches 138.7 ± 4.04 °C, higher than NaGdF4:Yb3+/Er3+ [6] and NaNdF4 (~128.4°C, in this work) under the same excitation conditions. More interestingly, the photoheating response of NaNdF4:5%Sm3+ to the pump laser has favorable linear characteristics within a specific power range. Still, overall, the responsiveness (i.e., the slope of the linear fit) is on a downward trend. In addition, due to high energy dissipation, increased measurement errors are observed when the pump power density is beyond 6 W/cm2.
Nd3+ and Sm3+ are both excellent luminescence centers [23,24,25], especially, the proportion between an electric dipole to magnetic dipole transition (i.e., symmetry ratio) of Sm3+ ions can be used to examine its local environment [26]. Herein, to understand the LHC behavior of NdF3:5%Sm3+ and NaNdF4:5%Sm3+, we tested the photoluminescence spectra of the samples with and without Sm3+ ions under 808 nm excitation. As shown in Figure 3a, NdF3 and NaNdF4 produce typical near-infrared emission in the range of 850–910 nm, corresponding to the 4F3/24I11/2 and 4F3/24I13/2 transitions of Nd3+, respectively. However, the luminescence quenching occurs after being doped with Sm3+. When the Sm3+ concentration is 5%, the emission peaks are completely quenched. Continuing to increase the concentration of Sm3+ (e.g., 40%), would result in little observable change in the spectrum.
No emissions belonging to Sm3+ ions are observed in the Sm3+-doped sample, indicating the doped Sm3+ acts only as the quenching center of luminescence. Direct evidence can be found in Figure 3b, in which the emission lifetime of Nd3+ decreases with increasing the Sm3+ concentration. Taken together, Figure 3c illustrates the proposed mechanism of photon absorption, radiation transition, and non-radiative transition. When excited at 808 nm, Nd3+ first transitions from the 4I9/2 level to the 4F5/2 state and then rapidly decays to the 4F3/2 level via the multi-phonon relaxation. Since the energy gap (~5380 cm−1) from this level to the 4I15/2 level far exceeds the phonon energy of NdF3 and NaNdF4 [15,27,28], the electrons at the 4I15/2 level mainly return to 4I11/2 and 4I13/2 levels through radiation transition. However, after introducing Sm3+, the following cross-relaxation processes occur and quench the luminescence of Nd3+.
CR1: 4F3/2(Nd3+) + 6H5/2(Sm3+)→4I15/2(Nd3+) + 6H13/2(Sm3+);
CR2: 4F3/2(Nd3+) + 6H5/2(Sm3+)→4I13/2(Nd3+) + 6F5/2(Sm3+);
CR3: 4F3/2(Nd3+) + 6H5/2(Sm3+)→4I11/2(Nd3+) + 6F9/2(Sm3+);
CR4: 4F3/2(Nd3+) + 6H5/2(Sm3+)→4I9/2(Nd3+) + 6F11/2(Sm3+).
In summary, herein the absorbed excitation energy is completely converted into thermal energy through the self-quench of Nd3+ [12,13] and the cross-relaxation between Nd3+ and Sm3+.
The inset in Figure 2 shows a simple model for analyzing the relationship between LHC and pump laser power. As shown, Qa, Qd, and QT represent the absorbed excitation energy, dissipated thermal energy, and residual thermal energy, respectively. According to the principle of conservation, QT = QaQd. Therefore, the temperature function is written as
T s = ρ σ N 0 C Q d C + T 0
where Ts is the radiation spot temperature, ρ represents the 808 nm laser power density, C represents the heat capacity of the material, σ represents the transition cross-section from the Nd3+ ground state to 4F5/2, N0 represents the population of Nd3+ ground state, and T0 is the ambient temperature. Furthermore, according to the dimensions of physical quantities, the first and second terms on the right side of Equation (1) can be defined as the light absorption temperature (Ta) and the heat dissipation temperature (Td), respectively. In this case, Equation (1) is rewritten as the following simplified form:
T s = T a T d + T 0
It is evident that Ta and Td are increasing functions of pump power. However, Ta is always greater than Td, and thus Ts increases monotonically with the increase in pump power. Impressively, when Td does not change much with power, Ts can be approximately regarded as a linear function of pump power. The analysis is consistent with the experimental results in Figure 2, indicating that the physical model we proposed is reasonable.
As a proof of concept, the LHC of NaNdF4:5%Sm3+ will be applied to regulate the UCL color of NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ microcrystals. Figure 4a,b shows the XRD pattern and SEM image of NaYF4:20%Yb3+/2%Ho3+/5%Ce3+, respectively. It is clear that the as-prepared UCL material belongs to the hexagonal structure, and its particles appear as short rods. Furthermore, the temperature-dependent UCL properties, shown in Figure 4c, indicate that the NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ is applicable in thermal-responsive UCL color regulation. The possible mechanism is given in Figure 4d. Since heating improves the phonon-assisted CR1 and CR2 processes, the UCL color tuning from green to red is observed [29]. As shown in Figure 4e, a luminescence anti-counterfeiting is designed by using NaNdF4:5%Sm3+ and NaYF4:20%Yb3+/2%Ho3+/5%Ce3+, in which the Chinese character “Light” is printed on a transparent glass substrate, and NaNdF4:5%Sm3+ and silica gel are mixed and evenly coated on the Chinese character to form a dense heating film (referred to as NNS film). As expected, when irradiated from the glass substrate side with a 980 nm laser, clear green fonts can be observed (Figure 4f), followed by the spot temperature of 35 °C. However, when 808 nm is used to excite the NNS film, the color of the font quickly turns to red, corresponding to the spot temperature as high as 180 °C. Keeping the 808 nm radiation but turning off the 980 nm laser, the temperature of the irradiated area remains almost unchanged, but the luminous font is no longer visible. Notably, herein 808 nm and 980 nm lasers are used as a thermal- and optical-switch, respectively, and thus the external temperature-control device is abandoned.

3. Experimental Section

3.1. Preparation of Sm3+-Doped NdF3 and NaNdF4 Microcrystals

A hydrothermal method was used to prepare the NdF3 and NaNdF4 microcrystals doped with different concentrations of Sm3+. Typically, LnNO3 (Ln3+ = 95 mol% Nd3+ + 5 mol% Sm3+) solution (20 mL) was obtained by dissolving Nd(NO3)3·6H2O (99.9%, Aladdin Scientific Corp., Riverside, CA, USA) and Sm(NO3)3·6H2O (99.9%, Aladdin Scientific Corp.) with deionized water, and then 1.7295 g C6H8O7∙H2O (A.C.S. grade, Aladdin Scientific Corp.) (mole ratio, citrate/Ln3+ = 2/1) was added under vigorous stirring. Subsequently, another 20 mL aqueous solution containing 2.0741 g NaF (A.C.S. grade, Sinopharm Chemical Reagent Co., Ltd., Shanghai, China)was added slowly drop by drop (mole ratio, F-/Ln3+ = 12/1). After 20 min, the resulting precursor solution was transferred to a 50 mL autoclave. The autoclave was heated at 200 °C for 12 h and then allowed to cool down to room temperature naturally. The product was separated from the reaction media by centrifugation and then washed three times with deionized water. After being dried at 50 °C for 12 h, the white phosphors were obtained.

3.2. Preparation of NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ Upconversion Materials

A similar procedure was used to prepare NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ upconversion microcrystals, in which Ln = 73 mol% Y + 20 mol% Yb + 2 mol% Ho + 5 mol% Ce, citrate/Ln3+ = 2/1, and F/Ln3+ = 12/1.

3.3. Characterization

X-ray diffraction (XRD) analysis was performed at 40 kV and 15 mA using a Miniflex600 X-ray generator (Rigaku Corp., Tokyo, Japan) with Cu Kα radiation (λ = 1.5406 Å). The 2θ scan range was 10–90° with a step size of 0.02°. Sample morphology was determined using a JSM-7800F (JEOL Ltd., Tokyo, Japan) scanning electric microscope (SEM). Energy dispersive X-ray (EDX) mapping was determined using a Phenom Pharos G2 (Phenom-World B.V., Eindhoven, The Netherlands) desktop scanning electron microscope equipped with elemental mapping. Photoluminescence spectra were collected by a portable spectrometer (Maya2000Pro, Ocean Optics Co., Hong Kong) using a continuous 980 nm diode laser as the excitation source. The photothermal heating was evaluated by a Fotric 288 infrared thermal imaging camera (Feichuke Intelligent Technology Co., Ltd., Shanghai, China).

4. Conclusions

The light-to-heat conversion (LHC) behavior of NaNdF4 doped with Sm3+ is reported. Due to the cross-relaxation between Nd3+ and Sm3+, the improved LHC is obtained after introducing the 5% Sm3+. The principle of conservation is applied to understand the relationship between photothermal heating and pump laser power. Results show that when the change of dissipation temperature with power is ignorable, the spot temperature of NaNdF4:5%Sm3+ has a favorable linear relationship with the pump power density. Combining the NaNdF4:5%Sm3+ with the classic NaYF4:Yb3+/Ho3+/Ce3+, dynamic luminescence anti-counterfeiting is developed. This novel strategy only requires two laser beams and thus, is more convenient to apply compared to the external temperature control.

Author Contributions

Conceptualization, T.P.; Methodology, R.J.; Formal analysis, T.P.; Data curation, R.J.; Writing—original draft, R.J.; Writing—review & editing, T.P.; Funding acquisition, R.J. and T.P. All authors have read and agreed to the published version of the manuscript.

Funding

A project supported by the Scientific Research Fund of Zhejiang Provincial Education Department (Y202248378), and the Natural Science Foundation of Huzhou City (No. 2022YZ06).

Data Availability Statement

The original contributions presented in the study are included in the article, further inquiries can be directed to the corresponding author.

Conflicts of Interest

The authors declare no conflicts of interest.

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Figure 1. (a,b) Rietveld refinement of XRD data and (c,d) SEM image of NaNdF4:5%Sm3+ and NdF3:5%Sm3+ as well as (ei) EDX mapping of F, Na, Nd and Sm elements in NaNdF4:5%Sm3+ sample.
Figure 1. (a,b) Rietveld refinement of XRD data and (c,d) SEM image of NaNdF4:5%Sm3+ and NdF3:5%Sm3+ as well as (ei) EDX mapping of F, Na, Nd and Sm elements in NaNdF4:5%Sm3+ sample.
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Figure 2. Photothermal heating of NdF3:5%Sm3+ and NaNdF4:5%Sm3+ flake samples, with a diameter of 10 mm and thickness of 1 mm, under 808 nm excitation. The inset gives a simple model for analyzing the relationship between photoheating and pump laser power, in which Qa, Qd, and QT represent the absorbed excitation energy, dissipated thermal energy, and residual thermal energy, respectively.
Figure 2. Photothermal heating of NdF3:5%Sm3+ and NaNdF4:5%Sm3+ flake samples, with a diameter of 10 mm and thickness of 1 mm, under 808 nm excitation. The inset gives a simple model for analyzing the relationship between photoheating and pump laser power, in which Qa, Qd, and QT represent the absorbed excitation energy, dissipated thermal energy, and residual thermal energy, respectively.
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Figure 3. (a) Photoluminescence spectra of various Sm3+-doped NaNdF4 and NdF3 under 808 nm excitation; (b) decay curves of 891 nm emission in various samples; (c) energy level of Nd3+ and Sm3+ and the proposed cross-relaxation channels between Nd3+ and Sm3+.
Figure 3. (a) Photoluminescence spectra of various Sm3+-doped NaNdF4 and NdF3 under 808 nm excitation; (b) decay curves of 891 nm emission in various samples; (c) energy level of Nd3+ and Sm3+ and the proposed cross-relaxation channels between Nd3+ and Sm3+.
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Figure 4. XRD (a), SEM (b), UCL spectra (c), and luminescence mechanism (d) of NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ as well as the photothermal-responsive anti-counterfeiting structure designed using NaNdF4:5%Sm3+ and NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ (e) and its application display (f).
Figure 4. XRD (a), SEM (b), UCL spectra (c), and luminescence mechanism (d) of NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ as well as the photothermal-responsive anti-counterfeiting structure designed using NaNdF4:5%Sm3+ and NaYF4:20%Yb3+/2%Ho3+/5%Ce3+ (e) and its application display (f).
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Jian, R.; Pang, T. Improved Photothermal Heating of NaNdF4 Microcrystals via Low-Level Doping of Sm3+ for Thermal-Responsive Upconversion Luminescence Anti-Counterfeiting. Inorganics 2024, 12, 327. https://doi.org/10.3390/inorganics12120327

AMA Style

Jian R, Pang T. Improved Photothermal Heating of NaNdF4 Microcrystals via Low-Level Doping of Sm3+ for Thermal-Responsive Upconversion Luminescence Anti-Counterfeiting. Inorganics. 2024; 12(12):327. https://doi.org/10.3390/inorganics12120327

Chicago/Turabian Style

Jian, Ronghua, and Tao Pang. 2024. "Improved Photothermal Heating of NaNdF4 Microcrystals via Low-Level Doping of Sm3+ for Thermal-Responsive Upconversion Luminescence Anti-Counterfeiting" Inorganics 12, no. 12: 327. https://doi.org/10.3390/inorganics12120327

APA Style

Jian, R., & Pang, T. (2024). Improved Photothermal Heating of NaNdF4 Microcrystals via Low-Level Doping of Sm3+ for Thermal-Responsive Upconversion Luminescence Anti-Counterfeiting. Inorganics, 12(12), 327. https://doi.org/10.3390/inorganics12120327

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