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Communication

High-Gain AlInAsSb SACM Avalanche Photodiode for SWIR Detection at Room Temperature

1
School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100015, China
2
North China Research Institute of Electro-Optics, Beijing 100015, China
3
National Key Laboratory of Infrared Detection Technologies, Beijing 100015, China
*
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Photonics 2026, 13(4), 374; https://doi.org/10.3390/photonics13040374
Submission received: 12 March 2026 / Revised: 1 April 2026 / Accepted: 8 April 2026 / Published: 14 April 2026
(This article belongs to the Section Lasers, Light Sources and Sensors)

Abstract

We report the design, epitaxial growth, and room-temperature operation of a high-gain AlInAsSb-based avalanche photodiode (APD) for short-wavelength infrared (SWIR) detection at 1.55 µm. The device employs SAGCM structure to confine the electric field within the multiplication region while suppressing dark current. High-quality AlInAsSb layers were grown on GaSb substrates by molecular beam epitaxy using a digital alloy approach, achieving excellent surface morphology (Ra < 0.2 nm) and uniform superlattice periodicity. Electrical characterization reveals a well-defined breakdown voltage near −17 V and a peak internal multiplication gain of 200 at 300 K under 0.2 mW illumination at 1550 nm—among the highest gains reported to date for antimonide-based APDs operating at room temperature. Variable-temperature dark current analysis indicates a transition from tunneling-dominated to thermally generated dark current as temperature increases from 100 K to 300 K. These results demonstrate the strong potential of AlInAsSb SAGCM APDs for eye-safe, high-sensitivity applications in LIDAR, free-space optical communication, and low-light SWIR imaging.
Keywords: AlInAsSb; avalanche photodiode (APD); room temperature AlInAsSb; avalanche photodiode (APD); room temperature

Share and Cite

MDPI and ACS Style

Liu, M.; Jin, S.; Zhang, D.; Yu, S.; Yao, M.; Guan, X.; Zhou, F.; Lu, P. High-Gain AlInAsSb SACM Avalanche Photodiode for SWIR Detection at Room Temperature. Photonics 2026, 13, 374. https://doi.org/10.3390/photonics13040374

AMA Style

Liu M, Jin S, Zhang D, Yu S, Yao M, Guan X, Zhou F, Lu P. High-Gain AlInAsSb SACM Avalanche Photodiode for SWIR Detection at Room Temperature. Photonics. 2026; 13(4):374. https://doi.org/10.3390/photonics13040374

Chicago/Turabian Style

Liu, Ming, Shupei Jin, Dongliang Zhang, Songlin Yu, Mingxin Yao, Xiaoning Guan, Feng Zhou, and Pengfei Lu. 2026. "High-Gain AlInAsSb SACM Avalanche Photodiode for SWIR Detection at Room Temperature" Photonics 13, no. 4: 374. https://doi.org/10.3390/photonics13040374

APA Style

Liu, M., Jin, S., Zhang, D., Yu, S., Yao, M., Guan, X., Zhou, F., & Lu, P. (2026). High-Gain AlInAsSb SACM Avalanche Photodiode for SWIR Detection at Room Temperature. Photonics, 13(4), 374. https://doi.org/10.3390/photonics13040374

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