Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method
Round 1
Reviewer 1 Report
Comments and Suggestions for AuthorsPlease include the data as requested in the PDF. Comments included in PDF.
Comments for author File: Comments.pdf
Author Response
Please see the attached file.
Author Response File: Author Response.docx
Reviewer 2 Report
Comments and Suggestions for AuthorsThe authors penetrative investigated a group of AlN bulk crystals grown by the physical vapor transport (PVT) method, by carrying out AFM, VASE and TDRS. The AlN bulk crystals’ surface status, band gaps optical properties and residual tensile stress exists are evaluated.
The temperature dependent Raman data found the stress, concentration and phonon lifetime were affected by the temperature, which are unique and useful findings for researchers and workers in related area.
Generally, I think this paper can be accepted and published on the journal of Photonics. However, some sentence or words maybe incorrectly used.In the line 70 and line 435,the authors seems like to say’ expand our understanding of the UWBG AlN materials’ rather than ’depend our understanding of ….’.
Author Response
Thanks for constructive and encouraging comments from the reviewer 2. We have changed the word “depend” to “expand”, in line 70 and line 435 of the manuscript. All others are OK. -- Zhe Chuan Feng (corresponding author)
Round 2
Reviewer 1 Report
Comments and Suggestions for AuthorsNo further comments. Manuscript can be published.