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Journal: Processes, 2025
Volume: 13
Number: 2550
Article:
Atmospheric Plasma Etching-Assisted Chemical Mechanical Polishing for 4H-SiC: Parameter Optimization and Surface Mechanism Analysis
Authors:
by
Mengmeng Shen, Min Wei, Xuelai Li, Julong Yuan, Wei Hang and Yunxiao Han
Link:
https://www.mdpi.com/2227-9717/13/8/2550
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