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Review

Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors

1
Micro-Nano and Bio-Electronic Devices Simulation-Modeling Laboratory, Department of Electronic Devices Circuits and Architectures, Universitatea Naţională de Stiinţă şi Tehnologie Politehnica Bucureşti, str. Splaiul Independentei nr. 313, 060042 Bucharest, Romania
2
National Institute for Research and Development in Microtechnologies, Str. Erou Iancu Nicolae, nr. 126A, 077190 Voluntari, Ilfov, Romania
*
Author to whom correspondence should be addressed.
Chemosensors 2025, 13(8), 316; https://doi.org/10.3390/chemosensors13080316
Submission received: 10 July 2025 / Revised: 7 August 2025 / Accepted: 13 August 2025 / Published: 20 August 2025

Abstract

More and more chemosensors and biosensors are turning to electronic transistors, as they are ideal transducers, precise in current response, miniaturized in size and capable of providing sub-picomolar detection limits. Among these devices, ISFET transistors—Ion-Sensitive Field-Effect Transistors—have the capacity of integrating ion-sensitive layers together with field effect transistors of ultimate generations. Recent studies have indicated that nanoporous materials deposited or grown within the transistor gate space offer a dual advantage—a favorable environment for an optimal capture of liquid state receptors through capillary effects, but also of direct anchoring of these nanoporous structures on a Si wafer. This article aims to review the constructive evolutions of ISFET transistors, along with some newer nanowire devices, as well as their co-integration techniques with nanoporous materials, which are beneficial in the optimization of many chemosensors but of enzymatic biosensors in particular.
Keywords: nanoporous layers; chemosensors; ISFET; silicon nano-wires; sensitive film nanoporous layers; chemosensors; ISFET; silicon nano-wires; sensitive film

Share and Cite

MDPI and ACS Style

Ravariu, C.; Manea, E.; Pârvulescu, C.; Dima, G. Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors. Chemosensors 2025, 13, 316. https://doi.org/10.3390/chemosensors13080316

AMA Style

Ravariu C, Manea E, Pârvulescu C, Dima G. Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors. Chemosensors. 2025; 13(8):316. https://doi.org/10.3390/chemosensors13080316

Chicago/Turabian Style

Ravariu, Cristian, Elena Manea, Cătălin Pârvulescu, and Gabriel Dima. 2025. "Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors" Chemosensors 13, no. 8: 316. https://doi.org/10.3390/chemosensors13080316

APA Style

Ravariu, C., Manea, E., Pârvulescu, C., & Dima, G. (2025). Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors. Chemosensors, 13(8), 316. https://doi.org/10.3390/chemosensors13080316

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