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Open AccessCommunication
Technologies 2016, 4(2), 16;

Latest Advances in the Generation of Single Photons in Silicon Carbide

Department of Mechanical and Aerospace Engineering, Benjamin M. Statler College of Engineering and Mineral Resources, West Virginia University, Morgantown, WV 26506, USA
Centre for Micro-Photonics, Swinburne University of Technology, Melbourne 3122, Australia
Department of Information Engineering, University of Parma, Parma 43121, Italy
Author to whom correspondence should be addressed.
Academic Editor: Stephan Reitzenstein
Received: 31 March 2016 / Revised: 17 May 2016 / Accepted: 26 May 2016 / Published: 2 June 2016
(This article belongs to the Special Issue Quantum Technologies)
Full-Text   |   PDF [2146 KB, uploaded 2 June 2016]   |  


The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC) has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC. View Full-Text
Keywords: quantum light sources; electrical-drive; quantum communication; quantum networks quantum light sources; electrical-drive; quantum communication; quantum networks

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Boretti, A.; Rosa, L. Latest Advances in the Generation of Single Photons in Silicon Carbide. Technologies 2016, 4, 16.

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