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Characterization of Highly Irradiated ALPIDE Silicon Sensors

Nuclear Physics Institute of the Czech Academy of Sciences, CZ-25068 Řež, Czech Republic
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These authors contributed equally to this work.
Universe 2019, 5(4), 91; https://doi.org/10.3390/universe5040091
Received: 20 March 2019 / Revised: 10 April 2019 / Accepted: 10 April 2019 / Published: 14 April 2019
(This article belongs to the Special Issue The Zimányi School and Analytic Hydrodynamics in High Energy Physics)
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Abstract

The ALICE (A Large Ion Collider Experiment) experiment at CERN will upgrade its Inner Tracking System (ITS) detector. The new ITS will consist of seven coaxial cylindrical layers of ALPIDE silicon sensors which are based on Monolithic Active Pixel Sensor (MAPS) technology. We have studied the radiation hardness of ALPIDE sensors using a 30 MeV proton beam provided by the cyclotron U-120M of the Nuclear Physics Institute of the Czech Academy of Sciences in Řež. In this paper, these long-term measurements will be described. After being irradiated up to the total ionization dose 2.7 Mrad and non-ionizing energy loss 2.7 × 10 13 1 MeV n eq · cm 2 , ALPIDE sensors fulfill ITS upgrade project technical design requirements in terms of detection efficiency and fake-hit rate. View Full-Text
Keywords: ALICE ITS upgrade; ALPIDE; MAPS; silicon pixel; radiation hardness; cyclotron ALICE ITS upgrade; ALPIDE; MAPS; silicon pixel; radiation hardness; cyclotron
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Raskina, V.; Křížek, F. Characterization of Highly Irradiated ALPIDE Silicon Sensors. Universe 2019, 5, 91.

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