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MFMIS Negative Capacitance FinFET Design for Improving Drive Current

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
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Electronics 2020, 9(9), 1423; https://doi.org/10.3390/electronics9091423
Received: 30 July 2020 / Revised: 29 August 2020 / Accepted: 30 August 2020 / Published: 2 September 2020
(This article belongs to the Section Semiconductor Devices)
The effect of remnant polarization (Pr), coercive electric-field (Ec), and parasitic capacitance of baseline device on the drive current (ION) of a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) negative capacitance FinFET (NC FinFET) was investigated. The internal gate voltage in the MFMIS structure was simulated considering gate leakage current. Using technology computer aided design (TCAD) tool, the device characteristic of 7 nm FinFET was quantitatively estimated, for the purpose of modeling the baseline device of MFMIS NC FinFET. The need for appropriate parasitic capacitance to avoid performance degradation in MFMIS NC FinFET was presented through the internal gate voltage estimation. With an appropriate parasitic capacitance, the effect of Pr and Ec was investigated. In the case of Ec engineering, it is inappropriate to improve the device performance for MFMIS NC FinFET without threshold voltage degradation. Rather than Ec engineering, an adequate Pr value for achieving high ION in MFMIS NC FinFET is suggested. View Full-Text
Keywords: negative capacitance; steep switching; MOSFET negative capacitance; steep switching; MOSFET
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MDPI and ACS Style

Min, J.; Shin, C. MFMIS Negative Capacitance FinFET Design for Improving Drive Current. Electronics 2020, 9, 1423.

AMA Style

Min J, Shin C. MFMIS Negative Capacitance FinFET Design for Improving Drive Current. Electronics. 2020; 9(9):1423.

Chicago/Turabian Style

Min, Jinhong; Shin, Changhwan. 2020. "MFMIS Negative Capacitance FinFET Design for Improving Drive Current" Electronics 9, no. 9: 1423.

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