High Pressure Processing of Ion Implanted GaN
Abstract
:1. Introduction
2. Thermodynamic Basics
3. Ultra-High-Pressure Annealing Process
4. P-Type GaN by Mg Implantation
5. Diffusion Mechanism of Beryllium in GaN—Case Study
6. Summary
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Pre-Exponent Factor D0 (cm2 s−1) | Activation Energy (eV) | |
---|---|---|
Higher Be concentration (erfc fitting) | 7.8 ± 1 × 10−3 | 2.73 ± 0.05 |
Lower Be concentration (Matano analysis) | 1.8 ± 1 × 10−3 | 2.72 ± 0.05 |
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Sierakowski, K.; Jakiela, R.; Lucznik, B.; Kwiatkowski, P.; Iwinska, M.; Turek, M.; Sakurai, H.; Kachi, T.; Bockowski, M. High Pressure Processing of Ion Implanted GaN. Electronics 2020, 9, 1380. https://doi.org/10.3390/electronics9091380
Sierakowski K, Jakiela R, Lucznik B, Kwiatkowski P, Iwinska M, Turek M, Sakurai H, Kachi T, Bockowski M. High Pressure Processing of Ion Implanted GaN. Electronics. 2020; 9(9):1380. https://doi.org/10.3390/electronics9091380
Chicago/Turabian StyleSierakowski, Kacper, Rafal Jakiela, Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai, Tetsu Kachi, and Michal Bockowski. 2020. "High Pressure Processing of Ion Implanted GaN" Electronics 9, no. 9: 1380. https://doi.org/10.3390/electronics9091380