Senapati, A.; Roy, S.; Lin, Y.-F.; Dutta, M.; Maikap, S.
Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM. Electronics 2020, 9, 1106.
https://doi.org/10.3390/electronics9071106
AMA Style
Senapati A, Roy S, Lin Y-F, Dutta M, Maikap S.
Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM. Electronics. 2020; 9(7):1106.
https://doi.org/10.3390/electronics9071106
Chicago/Turabian Style
Senapati, Asim, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta, and Siddheswar Maikap.
2020. "Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM" Electronics 9, no. 7: 1106.
https://doi.org/10.3390/electronics9071106
APA Style
Senapati, A., Roy, S., Lin, Y.-F., Dutta, M., & Maikap, S.
(2020). Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM. Electronics, 9(7), 1106.
https://doi.org/10.3390/electronics9071106