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Journal: Electronics, 2020
Volume: 9
Number: 718

Article: Layout Strengthening the ESD Performance for High-Voltage N-Channel Lateral Diffused MOSFETs
Authors: by Sheng-Kai Fan, Shen-Li Chen, Po-Lin Lin and Hung-Wei Chen
Link: https://www.mdpi.com/2079-9292/9/5/718

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