Next Article in Journal
Modeling and Optimization of Impedance Balancing Technique for Common Mode Noise Attenuation in DC-DC Boost Converters
Previous Article in Journal
Low-Power RTL Code Generation for Advanced CNN Algorithms toward Object Detection in Autonomous Vehicles
Open AccessArticle

Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance

Rome Università La Sapienza, Dipartimento di Ingegneria dell’Informazione, Elettronica e Telecomunicazioni, 00184 Roma, Italy
Electronics 2020, 9(3), 479;
Received: 17 January 2020 / Revised: 11 March 2020 / Accepted: 12 March 2020 / Published: 14 March 2020
(This article belongs to the Section Semiconductor Devices)
Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technology. High-frequency detection based on MOS technology has long been justified using a mechanism described by the plasma wave detection theory. The present study introduces a new interpretation of this effect based on the self-mixing process that occurs in the field effect depletion region, rather than that within the channel of the transistor. The proposed model formulates the THz modulation mechanisms of the charge in the potential barrier below the oxide based on the hydrodynamic semiconductor equations solved for the small-signal approximation. This approach explains the occurrence of the self-mixing process, the detection capability of the structure and, in particular, its frequency dependence. The dependence of the rectified voltage on the bias gate voltage, substrate doping, and frequency is derived, offering a new explanation for several previous experimental results. Harmonic balance simulations are presented and compared with the model results, fully validating the model’s implementation. Thus, the proposed model substantially improves the current understanding of THz rectification in semiconductors and provides new tools for the design of detectors. View Full-Text
Keywords: semiconductor device modeling; detectors; terahertz radiation semiconductor device modeling; detectors; terahertz radiation
Show Figures

Figure 1

MDPI and ACS Style

Palma, F. Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance. Electronics 2020, 9, 479.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop