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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

1
Department of Computer Science and Communications Technologies, Vilnius Gediminas Technical University, 10221 Vilnius, Lithuania
2
Micro and Nanoelectronics Systems Design and Research Laboratory, Vilnius Gediminas Technical University, 10257 Vilnius, Lithuania
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(1), 133; https://doi.org/10.3390/electronics9010133
Received: 22 November 2019 / Revised: 2 January 2020 / Accepted: 6 January 2020 / Published: 10 January 2020
(This article belongs to the Section Computer Science & Engineering)
Broadband amplifiers are essential building blocks used in high data rate wireless, radar, and instrumentation systems, as well as in optical communication systems. Only a traveling-wave amplifier (TWA) provides sufficient bandwidth for broadband applications without reducing modern linearization techniques. TWA requires gate-line and drain-line termination, which can be implemented on- and off-chip. This article compares the performance of identical 0.13 μm CMOS TWAs, differing only in gate-line termination placement. Measurement results revealed that the designed TWAs with on- and off-chip termination have a bandwidth of 10 GHz with a maximum gain of 15 dB and a power-added efficiency (PAE) of 5%–22% in the whole operating frequency range. Placing the gate-line termination off-chip results in an S21 flatness reduction, compared to the gain of a TWA with on-chip termination. Gain fluctuation over frequency is reduced by 4–8 dB when the termination resistor is placed as an external circuit. View Full-Text
Keywords: 5G; distributed; power amplifier; RF; traveling-wave; TWA; wireless 5G; distributed; power amplifier; RF; traveling-wave; TWA; wireless
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Vasjanov, A.; Barzdenas, V. 0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination. Electronics 2020, 9, 133.

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