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Improving Optical Performance of Ultraviolet Light-Emitting Diodes by Incorporating Boron Nitride Nanoparticles

1
Key Laboratory of Surface Functional Structure Manufacturing of Guangdong High Education Institutes, South China University of Technology, Guangzhou 510641, China
2
Foshan Nationstar Optoelectronics Company Ltd., Foshan 528000, China
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(8), 835; https://doi.org/10.3390/electronics8080835
Received: 4 June 2019 / Revised: 10 July 2019 / Accepted: 23 July 2019 / Published: 26 July 2019
(This article belongs to the Section Semiconductors and Quantum)
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PDF [5281 KB, uploaded 26 July 2019]
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Abstract

Ultraviolet light-emitting diodes (UVLED) are a new type of device in the LED development; however, the radiant efficacy of UVLEDs is still too low to satisfy the requirements of applications. In this study, boron nitride nanoparticles (BN NPs) are incorporated into the UVLED’s silicone encapsulation to improve the optical output power. This BN NPs-based package shows an increase in optical flux of 8.1% compared with silicone-only encapsulation when the BN NP concentration is optimized at 0.025 wt%. By analyzing the BN NP film, adding the BN NPs into silicone leads to a decrease in transmittance but an increase in haze. Haze and transmittance has an excellent negative correlation with increasing BN concentration under 365 nm. The moderate BN NP concentration maximizes the scattering performance from haze while maintaining high transmittance. Therefore, this enhanced light output is attributed to scattering that reduces optical losses from total internal reflection at the silicone–air interface. By using the new BN-based structure in green and red quantum dot devices, an increase radiant flux of the device is observed, 9.9% for green LED and 11.4% for red LED. This indicates that BN NPs have potential prospects in the application of UV LEDs used as excitation sources for quantum dots. View Full-Text
Keywords: BN nanoparticles; optical performance; quantum dots; ultraviolet light-emitting diode BN nanoparticles; optical performance; quantum dots; ultraviolet light-emitting diode
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Yan, C.; Zhao, Q.; Li, J.; Ding, X.; Tang, Y.; Li, Z. Improving Optical Performance of Ultraviolet Light-Emitting Diodes by Incorporating Boron Nitride Nanoparticles. Electronics 2019, 8, 835.

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