Han, T.; Liu, H.; Chen, S.; Wang, S.; Li, W.
A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance. Electronics 2019, 8, 574.
https://doi.org/10.3390/electronics8050574
AMA Style
Han T, Liu H, Chen S, Wang S, Li W.
A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance. Electronics. 2019; 8(5):574.
https://doi.org/10.3390/electronics8050574
Chicago/Turabian Style
Han, Tao, Hongxia Liu, Shupeng Chen, Shulong Wang, and Wei Li.
2019. "A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance" Electronics 8, no. 5: 574.
https://doi.org/10.3390/electronics8050574
APA Style
Han, T., Liu, H., Chen, S., Wang, S., & Li, W.
(2019). A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance. Electronics, 8(5), 574.
https://doi.org/10.3390/electronics8050574