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Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

Division of Electronics, KTH Royal Institute of Technology, 164 40 Stockholm, Sweden
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Electronics 2019, 8(5), 496; https://doi.org/10.3390/electronics8050496
Received: 14 March 2019 / Revised: 14 April 2019 / Accepted: 26 April 2019 / Published: 3 May 2019
(This article belongs to the Section Microelectronics and Optoelectronics)
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Abstract

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta ( β ) and collector current ( I C ) variation of SiC devices as temperature increases. The PDK-based complex digital ICs design flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications. View Full-Text
Keywords: Process Design Kit (PDK); bipolar logic gates; high temperature digital integrated circuits (ICs); transistor–transistor logic (TTL); SiC bipolar transistor; SiC VLSI Circuits Process Design Kit (PDK); bipolar logic gates; high temperature digital integrated circuits (ICs); transistor–transistor logic (TTL); SiC bipolar transistor; SiC VLSI Circuits
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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MDPI and ACS Style

Shakir, M.; Hou, S.; Hedayati, R.; Malm, B.G.; Östling, M.; Zetterling, C.-M. Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications. Electronics 2019, 8, 496.

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