Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications
Division of Electronics, KTH Royal Institute of Technology, 164 40 Stockholm, Sweden
Author to whom correspondence should be addressed.
Received: 14 March 2019 / Revised: 14 April 2019 / Accepted: 26 April 2019 / Published: 3 May 2019
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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta (
) and collector current (
) variation of SiC devices as temperature increases. The PDK-based complex digital ICs design flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.
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MDPI and ACS Style
Shakir, M.; Hou, S.; Hedayati, R.; Malm, B.G.; Östling, M.; Zetterling, C.-M. Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications. Electronics 2019, 8, 496.
Shakir M, Hou S, Hedayati R, Malm BG, Östling M, Zetterling C-M. Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications. Electronics. 2019; 8(5):496.
Shakir, Muhammad; Hou, Shuoben; Hedayati, Raheleh; Malm, Bengt G.; Östling, Mikael; Zetterling, Carl-Mikael. 2019. "Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications." Electronics 8, no. 5: 496.
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