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A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
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Electronics 2019, 8(5), 487; https://doi.org/10.3390/electronics8050487
Received: 12 April 2019 / Revised: 28 April 2019 / Accepted: 29 April 2019 / Published: 30 April 2019
(This article belongs to the Special Issue Millimeter-wave (mmWave) Communications)
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Abstract

This paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 μm GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analyzed and verified. The three-stage MMIC operating at 20–22 GHz obtained an improved third-order intermodulation ratio (IM3) of 20 dBc at a 27 dBm per carrier output power while demonstrating higher than a 27 dB small signal gain and 1-dB compression point output power of 30 dBm with 33% power added efficiency (PAE). The chip dimension was 2.00 mm × 1.40 mm. View Full-Text
Keywords: high-efficiency; K-band; linearity enhancement; power amplifier; GaAs pHEMT; diode compensation high-efficiency; K-band; linearity enhancement; power amplifier; GaAs pHEMT; diode compensation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Zhu, H.; Chen, W.; Huang, J.; Wang, Z.; Yu, F. A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation. Electronics 2019, 8, 487.

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