Next Article in Journal
Efficient Cumulant-Based Methods for Joint Angle and Frequency Estimation Using Spatial-Temporal Smoothing
Previous Article in Journal
A Capacitance-to-Time Converter-Based Electronic Interface for Differential Capacitive Sensors
Article Menu

Export Article

Open AccessArticle
Electronics 2019, 8(1), 81; https://doi.org/10.3390/electronics8010081

The Reentrant Four-Layer Quasi-Elliptic Bandstop Filter

1
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
2
Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Russia
3
Research and Development Department, Kemerovo State University, Kemerovo 650000, Russia
4
Radio-Receiving and Radio-Transmitting Devices Department, Novosibirsk State Technical University, Novosibirsk 630073, Russia
5
Department of Electronic Devices, Novosibirsk State Technical University, Novosibirsk 630073, Russia
6
General Physics Department, Novosibirsk State Technical University, Novosibirsk 630073, Russia
*
Author to whom correspondence should be addressed.
Received: 5 December 2018 / Revised: 25 December 2018 / Accepted: 2 January 2019 / Published: 10 January 2019
(This article belongs to the Section Microwave and Wireless Communications)
Full-Text   |   PDF [3134 KB, uploaded 15 January 2019]   |  

Abstract

The novel microwave quasi-elliptic bandstop filter, which uses the initially uncoupled strip transmission lines, is considered in this work. The proposed filter is based on the reentrant structure, where the metallic body with a floating potential is asymmetric. Generally speaking, the internal and external dielectric fillings must have their unequal relative permittivities. As a result, additional symmetrical reflection zeros are reached at the lower and upper pass bands of the stop band leading to the quasi-elliptic function response that improves the filter selectivity. The general transverse electromagnetic (TEM) circuit model for the proposed filter in terms of a series connection of the multi-ports is presented and then used to predict the initial electrical and geometrical parameters. An experimental printed circuit prototype has been manufactured and evaluated to validate the design concept. The measured filter parameters correlate well with the simulation-derived ones and that increases the degree of freedom in the fabrication of microwave frequency selective components. View Full-Text
Keywords: bandstop filter; reentrant structure; multilayer implementation bandstop filter; reentrant structure; multilayer implementation
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Atuchin, V.V.; Gorbachev, A.P.; Khrustalev, V.A.; Tarasenko, N.V. The Reentrant Four-Layer Quasi-Elliptic Bandstop Filter. Electronics 2019, 8, 81.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top