A 6-Bit 0.13 μm SiGe BiCMOS Digital Step Attenuator with Low Phase Variation for K-Band Applications
AbstractThis paper presents the design and measuring of a 6-bit SiGe BiCMOS digital step attenuator, with a maximum attenuation of 31.5 dB, and with 0.5 dB steps (64 states) that have the lowest RMS amplitude error and a low phase variation. To alleviate the large phase variation of the conventional attenuator at a higher frequency, the proposed attenuator utilizes a phase compensation circuit. The phase compensation circuit consists of a 2nd order low pass phase correction network, stacked in parallel to the switched π/T structure of each attenuation module. An attenuator with a phase compensation network shows a root mean square (RMS) amplitude error less than 0.43 dB, and the RMS insertion phase deviation varying from 1.6° to 4.2° over 20–24 GHz. The measured insertion loss is 21.9 dB and the input P1dB is 14.03 dBm at 22 GHz. Our confidence regarding the obtained results stems from a comparison of simulations, carried out using Cadence Virtuoso, and physical measurements using a network analyzer (also presented). The proposed attenuator’s design has a 0.13 μm SiGe BiCMOS process, with an approximate occupied area of 1.92 × 0.4 mm2 including chip pads. View Full-Text
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Sarfraz, M.M.; Ullah, F.; Wang, M.; Zhang, H.; Liu, Y. A 6-Bit 0.13 μm SiGe BiCMOS Digital Step Attenuator with Low Phase Variation for K-Band Applications. Electronics 2018, 7, 74.
Sarfraz MM, Ullah F, Wang M, Zhang H, Liu Y. A 6-Bit 0.13 μm SiGe BiCMOS Digital Step Attenuator with Low Phase Variation for K-Band Applications. Electronics. 2018; 7(5):74.Chicago/Turabian Style
Sarfraz, Muhammad M.; Ullah, Farman; Wang, Minghua; Zhang, Haiying; Liu, Yu. 2018. "A 6-Bit 0.13 μm SiGe BiCMOS Digital Step Attenuator with Low Phase Variation for K-Band Applications." Electronics 7, no. 5: 74.
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