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Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931, USA
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Academic Editor: Zhenqiang Ma
Electronics 2017, 6(2), 43; https://doi.org/10.3390/electronics6020043
Received: 16 March 2017 / Revised: 1 May 2017 / Accepted: 12 May 2017 / Published: 2 June 2017
(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)
Two-dimensional transition metal dichalcogenides (2D TMDCs) offer several attractive features for use in next-generation electronic and optoelectronic devices. Device applications of TMDCs have gained much research interest, and significant advancement has been recorded. In this review, the overall research advancement in electronic and optoelectronic devices based on TMDCs are summarized and discussed. In particular, we focus on evaluating field effect transistors (FETs), photovoltaic cells, light-emitting diodes (LEDs), photodetectors, lasers, and integrated circuits (ICs) using TMDCs. View Full-Text
Keywords: two-dimensional materials; transition metal dichalcogenides; heterostructures; heterojunctions; field effect transistors; photovoltaic cells; light-emitting diodes; photodetectors; lasers; integrated circuits; MoS2; WS2; MoSe2; WSe2; MoTe2; ReS2; ReSe2 two-dimensional materials; transition metal dichalcogenides; heterostructures; heterojunctions; field effect transistors; photovoltaic cells; light-emitting diodes; photodetectors; lasers; integrated circuits; MoS2; WS2; MoSe2; WSe2; MoTe2; ReS2; ReSe2
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Ye, M.; Zhang, D.; Yap, Y.K. Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides. Electronics 2017, 6, 43.

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