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Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

Department of Physics, Portland State University, Portland, OR 97207, USA
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Authors to whom correspondence should be addressed.
Academic Editors: Yoke Khin Yap and Zhixian Zhou
Electronics 2017, 6(2), 27; https://doi.org/10.3390/electronics6020027
Received: 12 February 2017 / Revised: 19 March 2017 / Accepted: 27 March 2017 / Published: 30 March 2017
(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)
Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of γ-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. View Full-Text
Keywords: atomic layer deposition; heterostructure; pn diode atomic layer deposition; heterostructure; pn diode
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MDPI and ACS Style

Browning, R.; Kuperman, N.; Moon, B.; Solanki, R. Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure. Electronics 2017, 6, 27. https://doi.org/10.3390/electronics6020027

AMA Style

Browning R, Kuperman N, Moon B, Solanki R. Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure. Electronics. 2017; 6(2):27. https://doi.org/10.3390/electronics6020027

Chicago/Turabian Style

Browning, Robert, Neal Kuperman, Bill Moon, and Raj Solanki. 2017. "Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure" Electronics 6, no. 2: 27. https://doi.org/10.3390/electronics6020027

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