Yoshino, M.; Horikiri, F.; Ohta, H.; Yamamoto, Y.; Mishima, T.; Nakamura, T.
High-k Dielectric Passivation for GaN Diode with a Field Plate Termination. Electronics 2016, 5, 15.
https://doi.org/10.3390/electronics5020015
AMA Style
Yoshino M, Horikiri F, Ohta H, Yamamoto Y, Mishima T, Nakamura T.
High-k Dielectric Passivation for GaN Diode with a Field Plate Termination. Electronics. 2016; 5(2):15.
https://doi.org/10.3390/electronics5020015
Chicago/Turabian Style
Yoshino, Michitaka, Fumimasa Horikiri, Hiroshi Ohta, Yasuhiro Yamamoto, Tomoyoshi Mishima, and Tohru Nakamura.
2016. "High-k Dielectric Passivation for GaN Diode with a Field Plate Termination" Electronics 5, no. 2: 15.
https://doi.org/10.3390/electronics5020015
APA Style
Yoshino, M., Horikiri, F., Ohta, H., Yamamoto, Y., Mishima, T., & Nakamura, T.
(2016). High-k Dielectric Passivation for GaN Diode with a Field Plate Termination. Electronics, 5(2), 15.
https://doi.org/10.3390/electronics5020015