Ahmad, F.; Vaccaro, L.; Nkembi, A.A.; Marchesoni, M.; Portesine, F.; Anyanwu, G.
Junction Temperature and Failure Behavior of High-Power Press Pack vs. Module Diodes Under High Anomalous Surge Currents. Electronics 2026, 15, 121.
https://doi.org/10.3390/electronics15010121
AMA Style
Ahmad F, Vaccaro L, Nkembi AA, Marchesoni M, Portesine F, Anyanwu G.
Junction Temperature and Failure Behavior of High-Power Press Pack vs. Module Diodes Under High Anomalous Surge Currents. Electronics. 2026; 15(1):121.
https://doi.org/10.3390/electronics15010121
Chicago/Turabian Style
Ahmad, Fawad, Luis Vaccaro, Armel Asongu Nkembi, Mario Marchesoni, Federico Portesine, and Giulio Anyanwu.
2026. "Junction Temperature and Failure Behavior of High-Power Press Pack vs. Module Diodes Under High Anomalous Surge Currents" Electronics 15, no. 1: 121.
https://doi.org/10.3390/electronics15010121
APA Style
Ahmad, F., Vaccaro, L., Nkembi, A. A., Marchesoni, M., Portesine, F., & Anyanwu, G.
(2026). Junction Temperature and Failure Behavior of High-Power Press Pack vs. Module Diodes Under High Anomalous Surge Currents. Electronics, 15(1), 121.
https://doi.org/10.3390/electronics15010121
