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Journal: Electronics, 2025
Volume: 14
Number: 1366
Article:
Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs
Authors:
by
Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Jiashu Qian, Shiva Houshmand, Atsushi Shimbori, Marvin H. White and Anant K. Agarwal
Link:
https://www.mdpi.com/2079-9292/14/7/1366
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