Srivastava, P.; Upadhyaya, A.; Yadav, S.; Negi, C.M.S.; Singh, A.K.
Analysis of Nanoscale Short Channel Effects in Cylindrical Gate-All-Around Junctionless FETs and Performance Enhancement with GaAs and III–V Materials for Low-Power, High Frequency Applications. Electronics 2025, 14, 1134.
https://doi.org/10.3390/electronics14061134
AMA Style
Srivastava P, Upadhyaya A, Yadav S, Negi CMS, Singh AK.
Analysis of Nanoscale Short Channel Effects in Cylindrical Gate-All-Around Junctionless FETs and Performance Enhancement with GaAs and III–V Materials for Low-Power, High Frequency Applications. Electronics. 2025; 14(6):1134.
https://doi.org/10.3390/electronics14061134
Chicago/Turabian Style
Srivastava, Pooja, Aditi Upadhyaya, Shekhar Yadav, Chandra Mohan Singh Negi, and Arvind Kumar Singh.
2025. "Analysis of Nanoscale Short Channel Effects in Cylindrical Gate-All-Around Junctionless FETs and Performance Enhancement with GaAs and III–V Materials for Low-Power, High Frequency Applications" Electronics 14, no. 6: 1134.
https://doi.org/10.3390/electronics14061134
APA Style
Srivastava, P., Upadhyaya, A., Yadav, S., Negi, C. M. S., & Singh, A. K.
(2025). Analysis of Nanoscale Short Channel Effects in Cylindrical Gate-All-Around Junctionless FETs and Performance Enhancement with GaAs and III–V Materials for Low-Power, High Frequency Applications. Electronics, 14(6), 1134.
https://doi.org/10.3390/electronics14061134