Sang, L.; Niu, X.; Shen, Z.; Huang, Y.; Tang, X.; Huang, K.; Xu, J.; He, Y.; He, F.; Li, Z.;
et al. Short-Circuit Characteristic Analysis of SiC Trench MOSFETs with Dual Integrated Schottky Barrier Diodes. Electronics 2025, 14, 853.
https://doi.org/10.3390/electronics14050853
AMA Style
Sang L, Niu X, Shen Z, Huang Y, Tang X, Huang K, Xu J, He Y, He F, Li Z,
et al. Short-Circuit Characteristic Analysis of SiC Trench MOSFETs with Dual Integrated Schottky Barrier Diodes. Electronics. 2025; 14(5):853.
https://doi.org/10.3390/electronics14050853
Chicago/Turabian Style
Sang, Ling, Xiping Niu, Zhanwei Shen, Yu Huang, Xuan Tang, Kaige Huang, Jinyi Xu, Yawei He, Feng He, Zheyang Li,
and et al. 2025. "Short-Circuit Characteristic Analysis of SiC Trench MOSFETs with Dual Integrated Schottky Barrier Diodes" Electronics 14, no. 5: 853.
https://doi.org/10.3390/electronics14050853
APA Style
Sang, L., Niu, X., Shen, Z., Huang, Y., Tang, X., Huang, K., Xu, J., He, Y., He, F., Li, Z., Jin, R., Yue, S., & Zhang, F.
(2025). Short-Circuit Characteristic Analysis of SiC Trench MOSFETs with Dual Integrated Schottky Barrier Diodes. Electronics, 14(5), 853.
https://doi.org/10.3390/electronics14050853
