Zheng, X.; Wang, Y.; Mo, R.; Liu, C.; Wang, T.; Huo, M.; Xiao, L.
Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory. Electronics 2025, 14, 473.
https://doi.org/10.3390/electronics14030473
AMA Style
Zheng X, Wang Y, Mo R, Liu C, Wang T, Huo M, Xiao L.
Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory. Electronics. 2025; 14(3):473.
https://doi.org/10.3390/electronics14030473
Chicago/Turabian Style
Zheng, Xuesong, Yuhang Wang, Rigen Mo, Chaoming Liu, Tianqi Wang, Mingxue Huo, and Liyi Xiao.
2025. "Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory" Electronics 14, no. 3: 473.
https://doi.org/10.3390/electronics14030473
APA Style
Zheng, X., Wang, Y., Mo, R., Liu, C., Wang, T., Huo, M., & Xiao, L.
(2025). Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory. Electronics, 14(3), 473.
https://doi.org/10.3390/electronics14030473