Ren, Y.; Su, J.; Ke, J.; Lin, H.; Li, B.; Kong, Z.; Zhang, Y.; Du, J.; Liang, R.; Xu, J.;
et al. Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power Applications. Electronics 2025, 14, 4646.
https://doi.org/10.3390/electronics14234646
AMA Style
Ren Y, Su J, Ke J, Lin H, Li B, Kong Z, Zhang Y, Du J, Liang R, Xu J,
et al. Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power Applications. Electronics. 2025; 14(23):4646.
https://doi.org/10.3390/electronics14234646
Chicago/Turabian Style
Ren, Yuhui, Jiale Su, Jiahan Ke, Hongxiao Lin, Ben Li, Zhenzhen Kong, Yiwen Zhang, Junhao Du, Renrong Liang, Jun Xu,
and et al. 2025. "Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power Applications" Electronics 14, no. 23: 4646.
https://doi.org/10.3390/electronics14234646
APA Style
Ren, Y., Su, J., Ke, J., Lin, H., Li, B., Kong, Z., Zhang, Y., Du, J., Liang, R., Xu, J., Duan, X., Dong, T., Su, X., Ye, T., Zhao, X., Miao, Y., & Radamson, H. H.
(2025). Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power Applications. Electronics, 14(23), 4646.
https://doi.org/10.3390/electronics14234646
