Zhang, H.; Cai, L.; Fan, C.; Liu, H.; Yan, S.; Zhao, R.; Yuan, P.
Study on Threshold Voltage Drift for SiC MOSFET Under Avalanche Stress. Electronics 2025, 14, 4511.
https://doi.org/10.3390/electronics14224511
AMA Style
Zhang H, Cai L, Fan C, Liu H, Yan S, Zhao R, Yuan P.
Study on Threshold Voltage Drift for SiC MOSFET Under Avalanche Stress. Electronics. 2025; 14(22):4511.
https://doi.org/10.3390/electronics14224511
Chicago/Turabian Style
Zhang, Haitao, Lin Cai, Chen Fan, Huipeng Liu, Su Yan, Rikang Zhao, and Pengpeng Yuan.
2025. "Study on Threshold Voltage Drift for SiC MOSFET Under Avalanche Stress" Electronics 14, no. 22: 4511.
https://doi.org/10.3390/electronics14224511
APA Style
Zhang, H., Cai, L., Fan, C., Liu, H., Yan, S., Zhao, R., & Yuan, P.
(2025). Study on Threshold Voltage Drift for SiC MOSFET Under Avalanche Stress. Electronics, 14(22), 4511.
https://doi.org/10.3390/electronics14224511