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Vasil’evskii IS, Klochkov AN, Nekrasov PV, Vinichenko AN, Kargin NI, Yskakov A, Bulavin MV, Galushko AV, Bekbayev A, Mukhametuly B, et al. Real-Time Technique for Semiconductor Material Parameter Measurement Under Continuous Neutron Irradiation with High Integral Fluence. Electronics. 2025; 14(19):3802. https://doi.org/10.3390/electronics14193802

Vasil’evskii, Ivan S., Aleksey N. Klochkov, Pavel V. Nekrasov, Aleksander N. Vinichenko, Nikolay I. Kargin, Almas Yskakov, Maksim V. Bulavin, Aleksey V. Galushko, Askhat Bekbayev, Bagdaulet Mukhametuly, and et al. 2025. "Real-Time Technique for Semiconductor Material Parameter Measurement Under Continuous Neutron Irradiation with High Integral Fluence" Electronics 14, no. 19: 3802. https://doi.org/10.3390/electronics14193802

Vasil’evskii, I. S., Klochkov, A. N., Nekrasov, P. V., Vinichenko, A. N., Kargin, N. I., Yskakov, A., Bulavin, M. V., Galushko, A. V., Bekbayev, A., Mukhametuly, B., Myrzabekova, E., Shegebayev, N., Kulikbayeva, D., Nurulin, R., Nurkasova, A., & Baitugulov, R. (2025). Real-Time Technique for Semiconductor Material Parameter Measurement Under Continuous Neutron Irradiation with High Integral Fluence. Electronics, 14(19), 3802. https://doi.org/10.3390/electronics14193802